13NM100 - N-CHANNEL POWER MOSFET

Unisonic Technologies

General Description

The UTC 13NM100 is an Super Junction MOSFET Structure.

It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance.

Key Features

S.
RDS(ON) ≤ 0.6 Ω @ VGS=10V, ID=6.5A.
High switching speed.
High breakdown voltage.
SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

13NM100 n-channel power mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	13NM100
Manufacturer	Unisonic Technologies
File Size	242.75 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	13NM100 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
13NM60	N-CHANNEL MOSFET	Unisonic Technologies
13NM60N	N-Channel MOSFET	STMicroelectronics
13NM65	N-CHANNEL MOSFET	Unisonic Technologies
13N03LA	IPD13N03LA	Infineon Technologies
13N06L	FQB13N06L	Fairchild Semiconductor

Other Datasheets by Unisonic Technologies

Part Number	Description
13NM50-U2	N-CHANNEL MOSFET
13NM80	N-CHANNEL MOSFET
13NM90	N-CHANNEL MOSFET
13N120-E2	N-CHANNEL POWER MOSFET
13N40	N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

UNISONIC TECHNOLOGIES CO., LTD 13NM100 Preliminary 13A, 1000V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 13NM100 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 13NM100 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.  FEATURES * RDS(ON) ≤ 0.6 Ω @ VGS=10V, ID=6.5A * High switching speed * High breakdown voltage  SYMBOL 2.Drain Power MOSFET 1.Gate 3.