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13P10 - P-CHANNEL MOSFET

General Description

The 13P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

Key Features

  • S.
  • RDS(ON) < 0.25Ω @ VGS=-10V, ID=-6A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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UNISONIC TECHNOLOGIES CO., LTD 13P10 -13A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The 13P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.  FEATURES * RDS(ON) < 0.25Ω @ VGS=-10V, ID=-6A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 13P10L-TM3-T 13P10G-TM3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-251 Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.