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14N60-ML Datasheet Preview

14N60-ML Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
14N60-ML
14A, 600V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
The UTC 14N60-ML is a high voltage power MOSFET
combines advanced trench MOSFET designed to have better
1
characteristics, such as fast switching time, low gate charge, low
on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used in high speed switching
applications of switching power supplies and adaptors.
FEATURES
1
* RDS(ON) 0.55 Ω @ VGS=10V, ID=7.0A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Power MOSFET
TO-220F
TO-220F1
TO-220F2
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
14N60L-TF1-T
14N60G-TF1-T
14N60L-TF2-T
14N60G-TF2-T
14N60L-TF3-T
14N60G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
14N60G-TF1-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TF1: TO-220F1, TF2: TO-220F2, TF3: TO-220F
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC
14N60
1
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-632.B




UTC

14N60-ML Datasheet Preview

14N60-ML Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

14N60-ML
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
14
A
Pulsed Drain Current (Note 2)
IDM
28
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
614
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3
V/ns
Power Dissipation
PD
38
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, IAS = 6.4A, VDD = 100V, RG = 25 Ω, Starting TJ = 25°C
4. ISD 14A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
3.28
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
600
Drain-Source Leakage Current
IDSS VDS=600V, VGS=0V
Forward
Gate- Source Leakage Current
Reverse
IGSS
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=7.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
Total Gate Charge (Note 1)
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=480V, VGS=10V, ID=14A
IG=1mA (Note 1, 2)
Turn-On Delay Time (Note 1)
tD(ON)
Turn-On Rise Time
tR
VDS=100V, VGS=10V, ID=14A,
Turn-Off Delay Time
tD(OFF) RG=25Ω (Note 1, 2)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS=14A , VGS=0V
Reverse Recovery Time (Note 1)
trr
IS=14A , VGS=0V
Reverse Recovery Charge
Qrr di/dt=100A/μs
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
TYP MAX UNIT
V
10 μA
100 nA
-100 nA
4.0 V
0.48 0.55 Ω
1850
pF
184
pF
12
pF
41
nC
9
nC
10
nC
24
ns
21
ns
132
ns
34
ns
14 A
28 A
1.4 V
410
ns
12.5
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R205-632.B


Part Number 14N60-ML
Description N-CHANNEL POWER MOSFET
Maker UTC
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