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1D5N10 - N-CHANNEL MOSFET

General Description

The UTC 1D5N10 is a N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switch speed and low gate charge.

Key Features

  • RDS(ON) ≤ 0.6 Ω @ VGS=10V, ID=0.75A.
  • High switch speed.
  • Low gate charge.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 1D5N10 Preliminary 1.5A, 100V N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC 1D5N10 is a N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switch speed and low gate charge.  FEATURES * RDS(ON) ≤ 0.6 Ω @ VGS=10V, ID=0.75A * High switch speed * Low gate charge  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1D5N10L-AE3-R 1D5N10G-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23 Pin Assignment 123 GSD Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-240.