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1NM60-Q - N-CHANNEL MOSFET

General Description

The UTC 1NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.

Key Features

  • S.
  • RDS(ON) < 4.6Ω @ VGS = 10V, ID =0.5A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET TO - 251 TO-252 1 SOT-223.

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UNISONIC TECHNOLOGIES CO., LTD 1NM60-Q 1.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET 1  DESCRIPTION The UTC 1NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. 1  FEATURES * RDS(ON) < 4.6Ω @ VGS = 10V, ID =0.