Download 2N120-E4 Datasheet PDF
Unisonic Technologies
2N120-E4
2N120-E4 is 1200V N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
DESCRIPTION The UTC 2N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. - FEATURES0 - RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A - Low Reverse Transfer Capacitance - Fast Switching Capability - Avalanche Energy Specified - Improved dv/dt Capability, High Ruggedness - SYMBOL Power MOSFET - ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N120L-TF1-T 2N120G-TF1-T 2N120L-TF2-T 2N120G-TF2-T 2N120L-TN3-R 2N120G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-252 Pin Assignment Packing Tube Tube Tape Reel - MARKING .unisonic..tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-888.C...