Datasheet4U Logo Datasheet4U.com

2N120-E4 - 1200V N-CHANNEL POWER MOSFET

Description

The UTC 2N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S0.
  • RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

Datasheet preview – 2N120-E4

📁 Similar Datasheet

  • 2N1204 - PNP Transistor (Motorola)
  • 2N1204A - PNP Transistor (Motorola)
  • 2N1209 - NPN Transistor (SSDI)
  • 2N120CND - N-Channel IGBT (Intersil Corporation)
  • 2N12 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2N1212 - NPN Transistor (SSDI)
  • 2N123 - PNP Transistor (ETC)
  • 2N1008 - PNP germanium transistor (Motorola)
  • 2N1008A - PNP germanium transistor (Motorola)
  • 2N1008B - PNP germanium transistor (Motorola)
Other Datasheets by UTC
  • 2N120 - 1200V N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 2N120-E4 2.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N120L-TF1-T 2N120G-TF1-T 2N120L-TF2-T 2N120G-TF2-T 2N120L-TN3-R 2N120G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel  MARKING www.
Published: |