Datasheet Details
| Part number | 2N120 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 498.10 KB |
| Description | 1200V N-CHANNEL POWER MOSFET |
| Datasheet | 2N120-UTC.pdf |
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Overview: UNISONIC TECHNOLOGIES CO., LTD 2N120 2.0A, 1200V N-CHANNEL POWER.
| Part number | 2N120 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 498.10 KB |
| Description | 1200V N-CHANNEL POWER MOSFET |
| Datasheet | 2N120-UTC.pdf |
|
|
|
The UTC 2N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES0 * RDS(ON) ≤ 7.5 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N120L-TA3-T 2N120G-TA3-T 2N120L-TQ2-T 2N120G-TQ2-T 2N120L-TQ2-R 2N120G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel MARKING .unisonic..tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-530.E 2N120 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 2 A Pulsed (Note 2) IDM 4 A Avalanche Energy Single Pulsed (Note 3) EAS 473 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.1 V/ns Power Dissipation PD 75 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
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2N120CND | N-Channel IGBT | Intersil Corporation |
| Part Number | Description |
|---|---|
| 2N120-E4 | 1200V N-CHANNEL POWER MOSFET |