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2N3906 Datasheet Preview

2N3906 Datasheet

PNP EPITAXIAL PLANAR TRANSISTOR

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2N3906 pdf
UNISONIC TECHNOLOGIES CO., LTD
2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
GENERAL PURPOSE
APPLIATION
FEATURES
* Collector-Emitter Voltage: VCEO=40V
* Complementary to UTC 2N3904
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
-
2N3906G-AB3-R
SOT-89
2N3906L-T92-B
2N3906G-T92-B
TO-92
2N3906L-T92-K
2N3906G-T92-K
TO-92
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
123
BCE
EBC
EBC
Packing
Tape Reel
Tape Box
Bulk
MARKING
SOT-89
TO-92
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R201-028.E



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UTC

2N3906 Datasheet Preview

2N3906 Datasheet

PNP EPITAXIAL PLANAR TRANSISTOR

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2N3906 pdf
2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
-40
-40
V
V
Emitter-Base Voltage
Collector Current
VEBO
IC
-5
-200
V
mA
Base Current
Collector dissipation
SOT-89
TO-92
IB
PC
-50 mA
550
625
mW
Junction Temperature
TJ 125 °С
Operating Temperature
Storage Temperature
TOPR
TSTG
-20 ~ +85
-40 ~ +150
°С
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICEX VCE=-30V, VEB=-3V
Base Cut-Off Current
IBL VCE=-30V, VEB=-3V
Collector-Base Breakdown Voltage
VCBO IC=-10A, IE=0
-40
Collector-Emitter Breakdown Voltage VCEO IC=-1mA, IB=0 (Note)
-40
Emitter-Base Breakdown Voltage
VEBO IE=-10A, IC=0
-6
hFE1 VCE=-1V, IC=-0.1mA
60
hFE2 VCE=-1V, IC=-1mA
80
DC Current Gain (Note)
hFE3 VCE=-1V, IC=-10mA
100
hFE4 VCE=-1V, IC=-50mA
60
hFE5 VCE=-1V, IC=-100mA
30
Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-10mA, IB=-1mA
(Note)
VCE(SAT)2 IC=-50mA, IB=-5mA
Base-Emitter Saturation Voltage
VBE(SAT)1 IC=-10mA, IB=-1mA
VBE(SAT)2 IC=-50mA, IB=-5mA
-0.65
Transition Voltage
fT VCE=-20V, IC=-10mA, f=100MHz
250
Output Capacitance
COB VCB=-5V, IE=0, f=1MHz
Turn On Time
tON VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=-1mA
Turn Off Time
tOFF IB1=1B2=-1mA
Note: Pulse test: PW<=300s, Duty Cycle<=2%
TYP
MAX UNIT
-50 nA
-50 nA
V
V
V
300
-0.25
-0.4
-0.85
-0.95
4.5
70
300
V
V
MHz
pF
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-028.E


Part Number 2N3906
Description PNP EPITAXIAL PLANAR TRANSISTOR
Maker UTC
Total Page 3 Pages
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2N3906 pdf
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