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2SA1201 Datasheet Preview

2SA1201 Datasheet

SILICON PNP EPITAXIAL TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
2SA1201
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
„ DESCRIPTION
The UTC 2SA1201 is designed for power amplifier and
voltage amplifier applications.
„ FEATURES
*High voltage: VCEO= -120V
*High transition frequency: fT=120MHz(typ.)
*Pc=1 to 2 W(mounted on ceramic substrate)
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SA1201L-x-AB3-R
2SA1201G-x-AB3-R
2SA1201L-x-T92-B
2SA1201G-x-T92-B
2SA1201L-x-T92-K
2SA1201G-x-T92-K
2SA1201L-x-T9N-B
2SA1201G-x-T9N-B
2SA1201L-x-T9N-K
2SA1201G-x-T9N-K
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-89
TO-92
TO-92
TO-92NL
TO-92NL
Pin Assignment
123
BCE
ECB
ECB
ECB
ECB
Packing
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
„ MARKING
SOT-89
TO-92
TO-92NL
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 4
QW-R204-024.G




UTC

2SA1201 Datasheet Preview

2SA1201 Datasheet

SILICON PNP EPITAXIAL TRANSISTOR

No Preview Available !

2SA1201
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
-120
-5
V
V
Collector Current
Base Current
IC
-800
mA
IB
-160
mA
Collector Power Dissipation SOT-89
PC
500
1000 (Note 2)
mW
mW
TO-92/TO-92NL
600 mW
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Mounted on cermic substrate( 250mm2 × 0.8t )
„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(SAT)
VBE
fT
COB
TEST CONDITIONS
IC= -10mA, IB=0
IE= -1mA, IC=0
VCB= -120V, IE=0
VEB= -5V, IC=0
VCE= -5V, IC= -100mA
IC= -500mA, IB= -50mA
VCE= -5V, IC= -100mA
VCE= -5V, IC= -100mA
VCB= -10V, IE=0, f=1MHz
MIN
-120
-5
80
TYP
120
MAX
-0.1
-0.1
240
-1.0
-1.0
30
UNIT
V
V
μA
μA
V
V
MHz
pF
„ CLASSIFICATION OF hFE
RANK
RANGE
O
80 - 160
Y
120 - 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R204-024.G


Part Number 2SA1201
Description SILICON PNP EPITAXIAL TRANSISTOR
Maker UTC
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2SA1201 Datasheet PDF





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