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2SC5765 - NPN EPITAXIAL SILICON TRANSISTOR

General Description

medium power amplifier applications strobo flash applications

Key Features

  • S.
  • Low Saturation Voltage: VCE(sat) = 0.27 V (max. ), (Ic = 3A / IB =60 mA).

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Full PDF Text Transcription for 2SC5765 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SC5765. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH  DESCRIPTION medium power amplifier applications strobo flash...

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O FLASH  DESCRIPTION medium power amplifier applications strobo flash applications  FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5765L-T9S-K 2SC5765G-T9S-K TO-92SP Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 1 2 3 E C B Packing Bulk  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R216-002.

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