Datasheet4U Logo Datasheet4U.com

30NM65 - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC 30NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.

Features

  • S.
  • RDS(ON) < 0.14Ω @ VGS=10V, ID=15A.
  • High Switching Speed.
  • 100% Avalanche Tested.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

Datasheet preview – 30NM65

Datasheet Details

Part number 30NM65
Manufacturer UTC
File Size 417.33 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 30NM65 Datasheet
Additional preview pages of the 30NM65 datasheet.

📁 Similar Datasheet

  • 30N05 - N-Channel MOSFET (Inchange Semiconductor)
  • 30N06 - N-Channel MOSFET (Inchange Semiconductor)
  • 30N06 - 60V N-Channel Enhancement Mode Power MOSFET (UMW)
  • 30N06-Q - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 30N06V-Q - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 30N10 - N-Channel MOSFET (Inchange Semiconductor)
  • 30N12 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 30N15 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 30N20 - 200V N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 30N20G - Power MOSFET (ON Semiconductor)
Other Datasheets by UTC
  • 30NM70 - N-CHANNEL MOSFET
  • 30NM90-Q - 900V N-CHANNEL SUPER-JUNCTION MOSFET
  • 30N06 - N-CHANNEL POWER MOSFET
  • 30N06G - N-CHANNEL POWER MOSFET
  • 30N06L - N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 30NM65 30A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 30NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(ON) < 0.14Ω @ VGS=10V, ID=15A * High Switching Speed * 100% Avalanche Tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
Published: |