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3N80Z - N-CHANNEL MOSFET

General Description

The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) < 4.2Ω @ VGS=10V, ID=1.5A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL.

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UNISONIC TECHNOLOGIES CO., LTD 3N80Z 3A, 800V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 4.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N80ZL-TF1-T 3N80ZG-TF1-T 3N80ZL-TN3-R 3N80ZG-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-912.