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4P50 - P-CHANNEL POWER MOSFET

General Description

The 4P50 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

Key Features

  • S.
  • RDS(ON) ≤ 4.3 Ω @ VGS=-10V, ID=-2.0A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD 4P50 -4.0A, -500V P-CHANNEL POWER MOSFET  DESCRIPTION The 4P50 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching AC/DC converters, and DC motor control.  FEATURES * RDS(ON) ≤ 4.3 Ω @ VGS=-10V, ID=-2.