Unisonic Technologies 4P50
The 4P50 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching AC/DC converters, and DC motor control.| Part No. | 4P50 |
|---|---|
| Datasheet | 4P50 Download |
| Manufacturer |  Unisonic Technologies |
| Description | P-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 4.3 Ω @ VGS=-10V, ID=-2.0A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified● SYMBOL Power MOSFET
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4P50L-TA3-T 4P50G-TA3-T 4P50L-TM3-T 4P50G-TM3-T 4P50L-TN3-R 4P50G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel
● MARKING Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 6 QW-R208-058.F 4P50 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -500 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current Continuous ID -4 A Pulsed Drain Current Pulsed (Note 2) IDM -12 A Single Pulsed Avalanche Energy Single Pulsed (Note 3) EAS 144 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.66 V/ns Power Dissipation TO-220 TO-251/TO-252 PD 73 W 40 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
