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6N40-TC Datasheet Preview

6N40-TC Datasheet

N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
6N40-TC
Preliminary
6A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.
FEATURES
* RDS(ON) < 1.1@ VGS=10V, ID=3.0A
* Avalanche Energy Specified
* Fast Switching Capability
* Linear Transfer Characteristics
* High Input Impedance
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
6N40L-TN3-R
6N40G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
123
GD S
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd.
1 of 5
QW-R205-373 a




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6N40-TC Datasheet Preview

6N40-TC Datasheet

N-CHANNEL MOSFET

No Preview Available !

6N40-TC
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
Drain Current
Avalanche Current (Note 2)
Continuous
Pulsed (Note 2)
VGSS
ID
IDM
IAR
±20
6.0
24
4.6
V
A
A
A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
106 mJ
2.0 V/ns
Power Dissipation
Junction Temperature
PD 48 W
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 4.6A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 5.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
110
2.6
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VDS=Rated BVDSS, VGS=0V
VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V, ID=3.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V,VDS=25V, f=1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, VGS=10V, ID=1.3A
IG=100μA (Note1, 2)
VDS=30V, VGS=10V, ID=0.5A,
RG=25(Note1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS =6.0A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS =6.0A, VGS=0V
Qrr dIF/dt=100A/μs
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
400 V
25 μA
±100 nA
2.0 4.0 V
1.1
485 pF
70 pF
7 pF
35.4 nC
3.6 nC
5.8 nC
31 ns
40 ns
117 ns
38 ns
6A
24 A
1.6 V
220 ns
1.0 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R205-373.a


Part Number 6N40-TC
Description N-CHANNEL MOSFET
Maker UTC
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