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75NM60 Datasheet Preview

75NM60 Datasheet

N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
75NM60
Preliminary
75A, 600V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 75NM60 is a Super Junction MOSFET Structure and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 55m@ VGS = 10V, ID = 37.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
75NM60L-T64-T
75NM60G-T64-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-264
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-444.a




UTC

75NM60 Datasheet Preview

75NM60 Datasheet

N-CHANNEL MOSFET

No Preview Available !

75NM60
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
75
150
A
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
1188
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
15 V/ns
Power Dissipation
PD 255 W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=5mH, IAS=21.8A, VDD=50V, RG=25, Starting TJ = 25°C.
4. ISD 30A, di/dt 200A/μs, VDD V(BR)DSS, TJ = 25°C.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
40
0.4
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VDS=0V ,VGS=±30V
600 V
10 µA
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 37.5A
2.5
4.5 V
55 m
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
4500
2050
3.7
pF
pF
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
VDS=300V, VGS=10V,
ID=75A , IG=1mA (Note 1, 2)
210
50
92
nC
nC
nC
tD(ON)
96 ns
tR VDD=300V, VGS=10V,
60 ns
tD(OFF) ID=30A, RG=25(Note 1, 2) 680 ns
tF 224 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS =75A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS =30A, VGS=0V,
Qrr dIF/dt=100A/μs
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating temperature.
75 A
150 A
1.4 V
720 ns
17 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R205-444.a


Part Number 75NM60
Description N-CHANNEL MOSFET
Maker UTC
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