900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UTC

7N100-C Datasheet Preview

7N100-C Datasheet

N-CHANNEL MOSFET

No Preview Available !

UNISONIC TECHNOLOGIES CO., LTD
7N100-C
7A, 1000V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 7N100-C provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES0
* RDS(ON) 1.6@ VGS=10V, ID=3.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
1
TO-220F2
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N100L-TF2-T
7N100G-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F2
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-569.A




UTC

7N100-C Datasheet Preview

7N100-C Datasheet

N-CHANNEL MOSFET

No Preview Available !

7N100-C
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
1000
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
7A
Pulsed (Note 2)
IDM
14
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
174 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
1.5 V/ns
Power Dissipation
PD 34 W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=5.9A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD7A, di/dt200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
3.68
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VDS=1000V, VGS=0V
VGS=±30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V, ID=3.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 1)
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=800V, VGS=10V, ID=7A
IG=1mA (Note 1, 2)
VDD=100V, VGS=10V,
ID=7A, RG=25(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
Body Diode Reverse Recovery Time (Note 1)
trr
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle2%.
2. Essentially independent of operating temperature.
IS=7A, VGS=0V
IS=7A, VGS=0V,
dIF/dt=100A/µs
MIN TYP MAX UNIT
1000
V
10 μA
±100 nA
3.0 5.0 V
1.6
1830
190
19
pF
pF
pF
52 nC
10 nC
15 nC
32 ns
26 ns
140 ns
51 ns
7A
14 A
1.4
1013
9.2
V
nS
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R205-569.A


Part Number 7N100-C
Description N-CHANNEL MOSFET
Maker UTC
PDF Download

7N100-C Datasheet PDF






Similar Datasheet

1 7N100-C N-CHANNEL MOSFET
UTC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy