* RDS(ON) < 1.1Ω @ VGS = 10V, ID =3.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET <.

* FEATURES * RDS(ON) < 1.1Ω @ VGS = 10V, ID =3.5A * Fast switching capability * Avalanche energy specified * Improv.

The UTC 7NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used .

7NM60

7NM60N

7NM65

7NM65Z

7NM120

7NM50

7NM70

7NM80

7N10

7N100-C

7N10Z

7N120-E2

7N150-E3