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8N100-FC - N-CHANNEL MOSFET

General Description

The UTC 8N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 1.4Ω @ VGS=10V, ID=4.0A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • SYMBOL Power MOSFET.

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Other Datasheets by Unisonic Technologies

Part Number Description
8N100-C 1000V N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 8N100-FC 8A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 1.4Ω @ VGS=10V, ID=4.0A * Fast Switching Capability * Avalanche Energy Specified  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 8N100L-TA3-T 8N100G-TA3-T 8N100L-TF1-T 8N100G-TF1-T 8N100L-TF3-T 8N100G-TF3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-529.