Download 9N95-E Datasheet PDF
Unisonic Technologies
9N95-E
9N95-E is N-CHANNEL MOSFET manufactured by Unisonic Technologies.
DESCRIPTION The UTC 9N95-E uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. - FEATURES - RDS(ON) ≤ 1.4Ω @ VGS=10V, ID=4.5A - Ultra Low Gate Charge ( Typical 45 n C ) - Low Reverse Transfer Capacitance ( CRSS = Typical 14 p F ) - Fast Switching Capability - Avalanche Energy Specified - Improved dv/dt Capability, High Ruggedness - SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source - ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N95L-T47-T 9N95G-T47-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 123 GDS Packing Tube - MARKING .unisonic..tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-068.b Advance Power MOSFET - ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 950 V Gate-Source...