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A1012 Datasheet Preview

A1012 Datasheet

2SA1012

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UNISONIC TECHNOLOGIES CO., LTD
2SA1012
PNP SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
.
1 TO- 251
FEATURES
*Low collector saturation voltage
VCE(SAT)=-0.4V(max.) at Ic=-3A
*High speed switching time: tS=1.0µs(Typ.)
*Complementary to 2SC2562
1
1
TO - 252
TO-220
1
TO-220F
*Pb-free plating product number: 2SA1012L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SA1012-x-TA3-T
2SA1012L-x-TA3-T
2SA1012-x-TF3-T
2SA1012L-x-TF3-T
2SA1012-x-TM3-T
2SA1012L-x-TM3-T
2SA1012-x-TN3-R
2SA1012L-x-TN3-R
2SA1012-x-TN3-T
2SA1012L-x-TN3-T
Package
www.DataSheet4U.com
TO-220
TO-220F
TO-251
TO-252
TO-252
Pin Assignment
123
BCE
BCE
BCE
BCE
BCE
Packing
Tube
Tube
Tube
Tape Reel
Tube
2SA1012L-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) x: reference to Classification of hFE1
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R203-015,E




UTC

A1012 Datasheet Preview

A1012 Datasheet

2SA1012

No Preview Available !

2SA1012
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25 )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Collector-Emitter Voltage
VEBO
-5
V
Peak Collector Current
IC -5 A
Power Dissipation
PD 25 W
Junction Temperature
TJ 150
Storage Temperature
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Switching time
Fall time
SYMBOL
TEST CONDITIONS
BVCBO IC=-100µA, IE=0
BVCEO IC=-10mA, IB=0
BVEBO IE=-100µA, IC=0
ICBO VCB=-50V, IE=0
IEBO VEB=-5V, IC=0
hFE1 VCE=-1V, IC=-1A
hFE2 VCE=-1V, IC=-3A
VCE (SAT) IC=-3A, IB=-0.15A
VBE (SAT) IC=-3A, IB=-0.15A
fT VCE=-4V, IC=-1A
Cob VCB=-10V, IE=0, f=1MHz
tON
tS
tF
MIN TYP MAX UNIT
-60 V
-50 V
-5 V
-1.0 µA
-1.0 µA
70 240
30
-0.2 -0.4 V
-0.9 -1.2 V
60 MHz
170 pF
0.1 µs
1.0 µs
0.1 µs
CLASSIFICATION of hFE1
RANK
RANGE
O
70 ~ 140
Y
120 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R203-015,E


Part Number A1012
Description 2SA1012
Maker UTC
Total Page 4 Pages
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