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BC547 Datasheet Preview

BC547 Datasheet

NPN EPITAXIAL SILICON TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
BC546/547/548
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
* High Voltage: UTC BC546, VCEO=65V
UTC BC547, VCEO=45V
UTC BC548, VCEO=30V
1
TO-92
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
BC546L-x-T92-B
BC546G-x-T92-B
BC546L-x-T92-K
BC546G-x-T92-K
BC547L-x-T92-B
BC547G-x-T92-B
BC547L-x-T92-K
BC547G-x-T92-K
BC548L-x-T92-B
BC548G-x-T92-B
BC548L-x-T92-K
BC548G-x-T92-K
Note: Pin Assignment: C: Collector B: Base E: Emitter
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
Pin Assignment
123
CBE
CBE
CBE
CBE
CBE
CBE
BC546L-x-T92-B
(1)Packing Type
(2)Package Type
(3)Rank
(4)Halogen Free
(1) B: Tape Box, K: Bulk
(2) T92: TO-92
(3) x: refer to CLASSIFICATION OF hFE
(4) L: Lead Free, G: Halogen Free
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
MARKING
BC546
BC547
BC548
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
1 of 4
QW-R201-037.D




UTC

BC547 Datasheet Preview

BC547 Datasheet

NPN EPITAXIAL SILICON TRANSISTOR

No Preview Available !

BC546/547/548
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
BC546
80 V
Collector-base voltage
BC547
VCBO
50 V
BC548
30 V
BC546
65 V
Collector-emitter voltage
BC547
BC548
VCEO
45 V
30 V
BC546
6V
Emitter-base voltage
BC547
VEBO
6V
BC548
5V
Collector current (DC)
IC 100 mA
Collector dissipation
Junction Temperature
PC 500 mW
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector Cut-off Current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Current gain bandwidth product
Output Capacitance
Input Capacitance
Noise Figure
SYMBOL
ICBO
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
fT
Cob
Cib
NF
TEST CONDITIONS
VCB=30V, IE=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
VCE=5V, IC=200μA, f=1KHz, RG=2K
MIN TYP MAX UNIT
15 nA
110 800
90 250 mV
200 600 mV
700 mV
900 mV
580 660 700 mV
720 mV
300 MHz
3.5 6 pF
9 pF
2 10 dB
CLASSIFICATION OF hFE
RANK
hFE
A
110 - 220
B
200 – 450
C
420 - 800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-037.D


Part Number BC547
Description NPN EPITAXIAL SILICON TRANSISTOR
Maker UTC
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BC547 Datasheet PDF






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