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UTC

BU208A Datasheet Preview

BU208A Datasheet

SILICON DIFFUSED POWER TRANSISTOR

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BU208A pdf
UTC BU208A SILICON DIFFUSED POWER TRANSISTOR
DESCRIPTION
The UTC BU208A is a high voltage, high power, high
speed switching NPN transistor in a mental envelope,
primarily for use in power supply and horizontal deflection
circuits of color television receivers.
1 TO-3
32
1: Base; 2: Emitter; 3: Collector
QUICK REFERENCE DATA
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
SYMBOL
TEST CONDITIONS
VCESM
VBE=0V
VCEO
IC
ICM www.DataSheet4U.com
PD Tc=25°C
VCEsat
Ic=4.5A; IB=2.0A
tf Ic=4.5A, IB1=-1/2 IB2=1.8A,
Vcc=100V
MIN MAX UNIT
1500 V
700 V
8A
15 A
150 W
1.0 V
1.0 µs
LIMITING RATINGS
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
SYMBOL
VCESM
VCEO
IC
ICM
IB
IBM
PD
Tstg
Tj
TEST CONDITIONS
VBE=0V
Tc=25°C
MIN MAX UNIT
1500 V
700 V
8A
15 A
2A
4A
150 W
-55 +150 °C
150 °C
UTC
UNISONIC TECHNOLOGIES CO. LTD 1
QW-R205-005,A



UTC
UTC

BU208A Datasheet Preview

BU208A Datasheet

SILICON DIFFUSED POWER TRANSISTOR

No Preview Available !

BU208A pdf
UTC BU208A SILICON DIFFUSED POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Collector-emitter cut-off current
ICE
Collector-emitter cut-off current
ICES
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transition frequency at f=1MHz
Switching times (16KHz line deflection
circuit)
Turn-off storage time Turn-off fall time
VCEO(SUS)
VCEsat
VBEsat
Hfe
ft
tS
tf
TEST CONDITIONS
VBE=0V, VCE=VCESMmax
VBE=0V, VCE=VCESMmax,
TJ=125°C
IB=0A, Ic=100mA, L=25mH
Ic=4.5A, IB=2.0A
Ic=4.5A, IB=2.0A
Ic=1A, VCE=5V
Ic=0.1A, VCE=10V
Ic=4.5A, IB1=-1/2 IB2=1.8A,
Vcc=100V
MIN MAX UNIT
1.0 mA
2.0 mA
700 V
1.0 V
1.5 V
8
3 MHz
8.0 µs
1.0 µs
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD 2
QW-R205-005,A


Part Number BU208A
Description SILICON DIFFUSED POWER TRANSISTOR
Maker UTC
Total Page 2 Pages
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