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C2073 Datasheet Preview

C2073 Datasheet

NPN SILICON POWER TRANSISTORS

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UNISONIC TECHNOLOGIES CO., LTD
2SC2073
Preliminary NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
The UTC 2SC2073 is an NPN silicon power transistors, it uses
UTC’s advanced technology to provide customers with high collector
base voltage, etc.
The UTC 2SC2073 is suitable for general purpose Power
amplifier, vertical output application.
FEATURES
* High collector base voltage
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SC2073L- TA3-T
2SC2073G-TA3-T
TO-220
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
123
BCE
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R221-021.a




UTC

C2073 Datasheet Preview

C2073 Datasheet

NPN SILICON POWER TRANSISTORS

No Preview Available !

2SC2073
Preliminary NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
150
150
V
V
Emitter-Base Voltage
Collector Current
Base Current
Continuous
Peak
VEBO
IC
ICM
IB
5.0
1.5
3.0
0.5
V
A
A
A
Total Power Dissipation @ TC=25°C
Derate above 25°C
PD
25 W
0.2 W/°C
Junction Temperature
Storage Temperature
TJ
TSTG
-55~+150
-55~+150
°C
°C
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction-to-Case
SYMBOL
θJC
RATINGS
5.0
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
IC=1.0mA, IB=0
IC=5.0mA, IB=0
IB=1.0mA, IC=0
VCB=120V, IE=0
VEB=5.0V, IC=0
ON CHARACTERISTICS (Note 1)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
hFE
VCE(SAT)
VBE(ON)
VCE=10V, IC=0.5A
IC=0.5A, IB=50mA
IC=500mA, VCE=10V
DYNAMIC CHARACTERISTICS
Current-Gain -Bandwidth Product
fT IC=0.5A,VCE=10V, f=1.0MHz
Notes: Pulse Test: Pulse Width=300μs, Duty Cycle2.0%.
MIN TYP MAX UNIT
150 V
150 V
5.0 V
10 μA
10 μA
40 140
1.5 V
0.65 0.85 V
4.0 MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R221-021.a


Part Number C2073
Description NPN SILICON POWER TRANSISTORS
Maker UTC
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