C5508 - NPN SILICON RF TRANSISTOR

Unisonic Technologies

General Description

The UTC 2SC5508 is an NPN silicon RF transistor, it uses UTC’s advanced technology to provide customers with low-noise, etc.

The UTC 2SC5508 is suitable for low-noise, high-gain amplification applications.

Key Features

Maximum available power gain: MAG=19dB TYP. @ VCE=2V, IC=20mA, f=2GHz.
fT=25GHz technology adopted.

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C5508 npn silicon rf transistor by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	C5508
Manufacturer	Unisonic Technologies
File Size	124.21 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	C5508 Datasheet

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UNISONIC TECHNOLOGIES CO., LTD 2SC5508 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON RF TRANSISTOR DESCRIPTION The UTC 2SC5508 is an NPN silicon RF transistor, it uses UTC’s advanced technology to provide customers with low-noise, etc. The UTC 2SC5508 is suitable for low-noise, high-gain amplification applications. FEATURES * Maximum available power gain: MAG=19dB TYP.