F17NP055 Datasheet | Unisonic Technologies

UNISONIC TECHNOLOGIES CO., LTD Preliminary DUAL ENHANCEMENT MODE (N-CHANNEL / P-CHANNEL) - DESCRIPTION The UTC F17NP055 incorporates a N-channel MOSFET and a P-channel MOSFET enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such, is designed to have better characteristics. such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits. - Features - N-CHANNEL: 55V/17A RDS(on) ≤...