F17NP055 mosfet equivalent, n-channel / p-channel power mosfet.
* N-CHANNEL: 55V/17A RDS(on) ≤ 44 mΩ @ VGS=10V, ID=8.5A * P-CHANNEL: -55V/-17A RDS(on) ≤ 134 mΩ @ VGS=-10V, ID=-8.5A * Fast body diode MOSFET technology * High switching .
such, is designed to have better characteristics. such as fast switching time, low gate charge, low on-state resistance .
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