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F7NM65 - 650V N-CHANNEL SUPER-JUNCTION MOSFET

General Description

The UTC F7NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at AC-DC converters for power applications.

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Key Features

  • S.
  • RDS(ON) ≤ 0.9 Ω @ VGS=10V, ID=3.5A.
  • High switching Speed.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for F7NM65 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for F7NM65. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD F7NM65 Preliminary 7.0A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC F7NM65 is a Super Junction MOSFET Structure and is desi...

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IPTION The UTC F7NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.  FEATURES * RDS(ON) ≤ 0.9 Ω @ VGS=10V, ID=3.

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