F9N100-FC
F9N100-FC is N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
DESCRIPTION
The UTC F9N100-FC N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
- FEATURES
- RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.5A
- Fast body diode MOSFET technology
- Low switching losses due to reduced Qrr
- Fast Switching Speeds
- 100% avalanche tested
- Linear Transfer Characteristics
- High Input Impedance
- Avalanche energy tested
- SYMBOL
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
F9N100L-TA3-T
F9N100G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220
Pin Assignment
Packing Tube
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QW-R209-446.a
- MARKING
Preliminary
POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-446.a
Preliminary
POWER MOSFET
- ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL...
