F9N100-FC mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.5A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Fast Switching Speeds * 100% avalanche tested * Linea.
such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
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