Datasheet Details
| Part number | MJE13003-P |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 383.59 KB |
| Description | NPN SILICON TRANSISTOR |
| Datasheet |
 MJE13003-P Datasheet
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General Description
These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220V applications in switch mode.
Key Features
- S.
- Reverse biased SOA with inductive load @ Tc=100°C.
- Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C.
- 700V blocking capability.
