Unisonic Technologies MJE13007D
MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220V switch mode applications.| Part No. | MJE13007D |
|---|---|
| Datasheet | MJE13007D Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN BIPOLAR POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
●DESCRIPTION
The UTC●
FEATURES
* VCEO(SUS) 400V * 700V Blocking Capability● ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13007DL-TA3-T MJE13007DG-TA3-T Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube
● MARKING Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 3 QW-R203-042.B MJE13007D NPN SILICON TRANSISTOR
● ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Sustaining Voltage VCEO 400 V Collector-Emitter Breakdown Voltage VCBO 700 V Emitter-Base Voltage VEBO 9.0 V Collector Current Continuous IC Peak (1) ICM 8.0 A 16 A Base Current Continuous IB Peak (1) IBM 4.0 A 8.0 A Emitter Current Continuous IE Peak (1) IEM 12 A 24 A Power Dissipation TC = 25°C PD 80 W Junction Temperature Storage Temperature TJ +150 °C TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
