MMBT3904
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO 60 V
Collector-Emitter Voltage
VCEO 40 V
Emitter-Base Voltage
VEBO 6 V
Collector Current
IC 200 mA
SOT-23
0.35 W
Collector Dissipation
SOT-323
SOT-523
PC
0.3 W
0.27 W
Junction Temperature
Storage Temperature
SOT-723
TJ
TSTG
0.13
+150
-55 ~ +150
W
°С
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
SOT-23
360
Junction to Ambient
SOT-323
SOT-523
θJA
420
450
SOT-723
470
Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
UNIT
°С/W
°С/W
°С/W
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO IC=10A, IE=0
Collector-Emitter Breakdown Voltage
VCEO IC=1mA, IB=0 (Note)
Emitter-Base Breakdown Voltage
VEBO IE=10A, IC=0
Collector-Emitter Saturation Voltage (Note) VCE(SAT)1 IC=10mA, IB=1mA
VCE(SAT)2 IC=50mA, IB=5mA
Base-Emitter Saturation Voltage (Note)
VBE(SAT)1 IC=10mA, IB=1mA
VBE(SAT)2 IC=50mA, IB=5mA
Collector Cut-Off Current
ICEX VCE=30V, VEB=3V
Base Cut-Off Current
IBL VCE=30V, VEB=3V
hFE1 VCE=1V, IC=0.1mA
hFE2 VCE=1V, IC=1mA
DC Current Gain (Note)
hFE3 VCE=1V, IC=10mA
hFE4 VCE=1V, IC=50mA
hFE5 VCE=1V, IC=100mA
Current Gain Bandwidth Product
fT VCE=20V, IC=10mA, f=100MHz
Output Capacitance
COB VCB=5V, IE=0, f=1MHz
Turn On Time
tON VCC=3V,VBE=0.5V,IC=10mA,IB1=1mA
Turn Off Time
tOFF IB1=1B2=1mA
Note: Pulse test: PW ≤ 300s, Duty Cycle ≤ 2%.
MIN
60
40
6
0.65
40
70
100
60
30
300
TYP
MAX UNIT
V
V
V
0.2 V
0.3 V
0.85 V
0.95 V
50 nA
50 nA
300
MHz
4 pF
70 ns
250 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-012.I
