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MMBT9014 Datasheet Preview

MMBT9014 Datasheet

LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
MMBT9014
NPN SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL
& LOW NOISE
FEATURES
* High Total Power Dissipation. (450mW)
* Excellent hFE Linearity.
* Complementary to UTC MMBT9015
3
1
2
SOT-23
(JEDEC TO-236)
ORDERING INFORMATION
Ordering Number
MMBT9014G-x-AE3-R
Note: Pin Assignment: E: Emitter
B: Base
Package
SOT-23
C: Collector
Pin Assignment
123
EBC
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-022.F




UTC

MMBT9014 Datasheet Preview

MMBT9014 Datasheet

LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR

No Preview Available !

MMBT9014
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO 45 V
Collector-Base Voltage
VCBO 50 V
Emitter Base Voltage
VEBO 5 V
Collector Current
IC 100 mA
Collector dissipation
PC 225 mW
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector cutoff current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-emitter on voltage
Current-Gain-Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
TEST CONDITIONS
VCEO IC=100A, IE=0
VCBO
VEBO
IC=1mA, IB=0
IE=100A, IC=0
ICBO
IEBO
VCB=50V, IE=0
VEB=5V, IC=0
hFE VCE=5V,Ic=1mA
VCE(SAT) IC=100mA, IB=5mA
VBE(SAT) IC=100mA, IB=5mA
VBE(ON) VCE=5V, IC=2mA
fT VCE=5V, IC=10mA
COB VCB=10V, IE=0, f=1MHz
NF VCE=5V,IC=0.2mA,f=1KHz,RS=2K
MIN TYP MAX UNIT
50 V
45 V
5V
50 nA
100 nA
60 280 1000
0.14 0.3 V
0.84 1.0 V
0.58 0.63 0.7 V
150 270
MHz
2.2 3.5 pF
0.9 10 dB
CLASSIFICATION OF hFE
RANK
RANGE
A
60-150
B
100-300
C
200-600
D
400-1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-022.F


Part Number MMBT9014
Description LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR
Maker UTC
Total Page 3 Pages
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