MMDT8150 Datasheet | Unisonic Technologies

DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. - FEATURES - Low VCE(SAT), VCE(SAT)=40m V (typ.)@IC / IB = 50m A / 2.5m A - Transistor elements are independent to eliminate interference. - Mounting cost and area can be cut in half. - EQUIVALENT CIRCUIT 6 5 4 Tr1 1 2 3 Tr2 - ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R Package SOT-363 Packing Tape Reel (1)Packing Type (2)Package Type (3)Lead Free (1) R: Tape Reel (2) AL6: SOT-363 (3) Halogen Free, L: Lead Free - MARKING T81 G: Halogen Free L: Lead Free .unisonic..tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 2 QW-R218-017.a Free Datasheet http://../ - Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 800 m A Collector Current (Pulse) ICP 1.5 (Note 2) A Power Dissipation PD 200 (total) (Note 3) m W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Single pulse, PW=10ms 3. 150m W per element must not be exceeded. - ELECTRICAL CHARACTERISTICS (TA =25°C) MIN TYP MAX UNIT 40 V 25 V 6 V 0.5 µA 0.5 µA 40 60 m V 0.2 0.3 V 0.3 0.5 V 1 V 180 560 40 82 150 MHz 15 p F PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL TEST CONDITIONS BVCBO IC=100µA, IE=0 BVCEO IC=2m A, IB=0 BVEBO IE=100µA, IC=0 ICBO VCB=30V, IE=0 IEBO VEB=6V, IC=0 VCE(SAT)1 IC=50m A, IB=2.5m A...