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UBV45 Datasheet Preview

UBV45 Datasheet

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

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UNISONIC TECHNOLOGIES CO., LTD
UBV45
NPN SILICON TRANSISTOR
HIGH VOLTAGE FAST
SWITCHING NPN POWER
APPLICATIONS
DESCRIPTION
The device is manufactured using High Voltage Multi Epitaxial
Planar technology for high switching speeds and high voltage
capability.
The UTC UBV45 is designed for use in Compact Fluorescent
Lamps.
FEATURES
* High Voltage Capability
* Low Spread of Dynamic Parameters
* Very High Switching Speed
1
TO-92
*Pb-free plating product number: UBV45L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UBV45-T92-B
UBV45L-T92-B
UBV45-T92-K
UBV45L-T92-K
www.DataSheet4U.com
Package
TO-92
TO-92
Pin Assignment
1 23
E CB
E CB
Packing
Tape Box
Bulk
UBV45L-T92-B
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) B: Tape Box, K: Bulk
(2) T92: TO-92
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R201-081,c




UTC

UBV45 Datasheet Preview

UBV45 Datasheet

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

No Preview Available !

UBV45
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25 )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Emitter Voltage (VBE = 0)
VCES
700
V
Collector Emitter Voltage (IB = 0)
VCEO
400
V
Emitter Base Voltage (IC = 0)
VEBO
9
V
Collector Current
IC 0.75 A
Collector Peak Current (tp < 5 ms)
ICM 1.5 A
Base Current
IB 0.4 A
Base Peak Current (tp < 5 ms)
Total Dissipation at Ta = 25
IBM 0.75 A
PD 0.95 W
Junction Temperature
TJ +150
Storage Temperature
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERAMAL DATA
PARAMETER
Thermal Resistance Junction-ambient
SYMBOL
JA
RATINGS
130
UNIT
/W
ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Emitter Sustaining Voltage (IB = 0) VCEO(SUS)*
Collector Emitter Saturation Voltage
VCE(SAT)*
Base Emitter Saturation Voltage
Emitter Cut off Current (IC = 0)
Collector Cut off Current (VBE = -1.5V)
DC Current Gain
VBE(SAT)*
IEBO
ICEV
hFE*
Inductive Load Fall Time
tF
* Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
IC = 1 mA
IC = 0.2 A , IB = 40 mA
IC = 0.3 A , IB = 75 mA
IC = 0.4 A , IB = 135 mA
IC = 0.2 A , IB = 40 mA
IC = 0.3 A , IB = 75 mA
VEB = 9 V
VCE = 700 V
IC = 0.2 A, VCE = 5 V
IC = 0.4 A, VCE = 5 V
IC = 0.2 A , VCLAMP = 300 V
IB1 = -IB2 = 40 mA , L = 3 mH
400
12
7
TYP
0.2
0.3
0.4
0.3
MAX UNIT
V
0.5
1V
1.5
1V
1.2
1 mA
250 µ A
27
20
µs
INDUCTIVE LOAD SWITCHING TEST CIRCUIT
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
I B1
VBB
(1)
IB
RBB(2)
-
+
(3)
IC
LC
VCE
VCLAMP
Vcc
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-081,c


Part Number UBV45
Description HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS
Maker UTC
Total Page 4 Pages
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