* RDS(ON) ≤ 85 mΩ @ VGS=10V, ID=5.2A RDS(ON) ≤ 112 mΩ @ VGS=4.5V, ID=4.0A * High Power and Current Handling Capability * High Cell Density Trench Technology
* SYMBOL .

* FEATURES * RDS(ON) ≤ 85 mΩ @ VGS=10V, ID=5.2A RDS(ON) ≤ 112 mΩ @ VGS=4.5V, ID=4.0A * High Power and Current Handl.

The UTC UD8N04Z is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with an extremely low on-state resistance and superior switching performance. The UTC UD8N04Z is suitable for high frequency DC-DC conve.

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