900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UTC

UF5N08 Datasheet Preview

UF5N08 Datasheet

N-CHANNEL MOSFET

No Preview Available !

UNISONIC TECHNOLOGIES CO., LTD
UF5N08
5A, 80V N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
DESCRIPTION
The UTC UF5N08 is a N-channel power MOSFET providing
very low on-resistance. It has high efficiency and perfect
cost-effectiveness. It can be generally applied in the commercial
and industrial fields.
FEATURES
* RDS(ON) < 0.21@ VGS =10V, ID =2.5A
* Simple drive requirement
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF5N08L-TM3-T
UF5N08G-TM3-T
UF5N08L-TN3-R
UF5N08G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 5
QW-R209-282.B




UTC

UF5N08 Datasheet Preview

UF5N08 Datasheet

N-CHANNEL MOSFET

No Preview Available !

UF5N08
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
80
V
Gate-Source Voltage
Drain Current
Avalanche Energy (Note 3)
Continuous
Pulsed (Note 2)
Single Pulsed (Note 3)
VGSS
ID
IDM
EAS
±20
5
15
10
V
A
A
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt 18 V/ns
Power Dissipation
PD 32 W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 0.1 mH, IAS = 14 A, VDD = 50 V, RG = 25 , Starting TJ = 25°C.
4. ISD 5.0 A, di/dt 200 A/μs, VDD V(BR)DSS, TJ = 25°C.
THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
SYMBOL
θJA
θJC
RATINGS
110
3.9
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS =0V, ID =250µA
VDS =80V,VGS =0V
VGS =±20V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain to Source On-state Resistance
VGS(TH) VDS =VGS, ID =250µA
RDS(ON) VGS =10V, ID =2.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V, f =1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time (Note 1)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=64V, VGS=10V, ID=5A,
IG=1mA (Note 1, 2)
VDD=40V, VGS=10V, ID=5A,
RG =25(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1) VSD IS =5.0A, VGS =0V
Reverse Recovery Time (Note 1)
Reverse Recovery Charge
trr IS=5.0A,VGS=0V,
Qrr dI/dt=100A/µs
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating ambient temperature.
MIN TYP MAX UNIT
80 V
10 µA
±100 nA
2.0 4.0 V
0.21
255 pF
50 pF
9 pF
11.3 nC
5.8 nC
1.8 nC
2.4 ns
15.4 ns
3.4 ns
2.4 ns
5A
15 A
1.4 V
75 ns
72 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-282.B


Part Number UF5N08
Description N-CHANNEL MOSFET
Maker UTC
PDF Download

UF5N08 Datasheet PDF






Similar Datasheet

1 UF5N08 N-CHANNEL MOSFET
UTC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy