UF730 Overview
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
UF730 Key Features
- RDS(ON) = 1Ω@VGS = 10 V
- Avalanche Energy Specified
- Rugged
- SOA is Power Dissipation Limited
- Fast Switching Capability
- Linear Transfer Characteristics
- High Input Impedance
- SYMBOL
- ORDERING INFORMATION
