900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UTC

UF8010 Datasheet Preview

UF8010 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

UNISONIC TECHNOLOGIES CO., LTD
UF8010
80A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF8010 uses advanced technology to provide excellent
RDS(ON), fast switching speed, low gate charge, and excellent
efficiency. This device is suitable for high frequency DC-DC
converters, UPS and motor control.
FEATURES
* RDS(ON) :12m(Typ.)
* Lower gate-drain charge for lower switching losses
* Perfect avalanche voltage and current performance
* Fully characterized capacitance including effective COSS to simplify
design
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UF8010L-TA3-T
UF8010G-TA3-T
TO-220
UF8010L-TF3-T
UF8010G-TF3-T
TO-220F
UF8010L-TQ2-T
UF8010G-TQ2-T
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-348.D




UTC

UF8010 Datasheet Preview

UF8010 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

UF8010
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Source Voltage
Continuous Drain Current (VGS=10V,TC=25°C)
Pulsed Drain Current
Avalanche Energy
Single Pulse (Note 2)
Repetitive
Avalanche Current
Peak Diode Recovery dv/dt (Note 3)
VGS
ID
IDM
EAS
EAR
IAR
dv/dt
±20
80 (Note 2)
320
310
26
45
16
V
A
A
mJ
mJ
A
V/ns
Power Dissipation(TC=25°C)
Derating above 25°C
TO-220 / TO-263
TO-220F
TO-220 / TO-263
TO-220F
PD
260 W
54 W
1.8 W/°C
0.36 W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ + 150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ = 25°C, L = 0.31mH, RG =25, IAS = 45A.
3. ISD45A, di/dt110A/μs, VDDBVDSS, TJ150°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220 / TO-263
TO-220F
SYMBOL
θJA
θJC
RATINGS
62.5
0.57
2.3
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-348.D


Part Number UF8010
Description N-CHANNEL POWER MOSFET
Maker UTC
PDF Download

UF8010 Datasheet PDF





Similar Datasheet

1 UF801 (UF800 - UF808) ULTRAFAST SWITCHING RECTIFIER
Pan Jit International
2 UF801 (UF800 - UF808) 8.0A ULTRAFAST GLASS PASSIVATED RECTIFIER
Won-Top Electronics
3 UF8010 N-CHANNEL POWER MOSFET
UTC
4 UF801F (UF800F - UF808F) ISOLATION ULTRAFAST SWITCHING RECTIFIER
Pan Jit International
5 UF801F (UF800F - UF808F) ISOLATION ULTRAFAST GLASS PASSIVATED RECTIFIER
Won-Top Electronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy