Datasheet4U Logo Datasheet4U.com

UF840-F - N-CHANNEL MOSFET

General Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Key Features

  • Low RDS(ON)< 0.87Ω @ VGS=10V. ID = 4.4A.
  • Single Pulse Avalanche Energy Rated.
  • Fast Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UF840 ULTRA FAST RECOVERY RECTIFIER Microsemi
UF80 Pentode WF
UF80 Pentode RFT
UF800 (UF800 - UF808) ULTRAFAST SWITCHING RECTIFIER Pan Jit International
UF800 (UF800 - UF808) 8.0A ULTRAFAST GLASS PASSIVATED RECTIFIER Won-Top Electronics

Other Datasheets by Unisonic Technologies

Part Number Description
UF840-C N-CHANNEL MOSFET
UF840-CB N-CHANNEL MOSFET
UF840 N-CHANNEL POWER MOSFET
UF8010 N-CHANNEL POWER MOSFET
UF830 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UF840-F 8.0A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * Low RDS(ON)< 0.87Ω @ VGS=10V. ID = 4.4A * Single Pulse Avalanche Energy Rated * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free UF840L-TA3-T UF840G-TA3-T UF840L-TF3-T UF840G-TF3-T Pin Assignment: A: Anode K: Cathode Package TO-220 TO-220F Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING www.unisonic.com.