UFC8N80 - N-CHANNEL MOSFET

Unisonic Technologies

General Description

The UTC UFC8N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

S.
RDS(ON) < 1.7 Ω @ VGS=10V, ID=4.0A.
Fast Switching Capability.
Avalanche Energy Specified.
SYMBOL Power MOSFET.

📥 Download Datasheet

UFC8N80 n-channel mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	UFC8N80
Manufacturer	Unisonic Technologies
File Size	342.79 KB
Description	N-CHANNEL MOSFET
Datasheet	UFC8N80 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by Unisonic Technologies

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

UNISONIC TECHNOLOGIES CO., LTD UFC8N80 8A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UFC8N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 1.7 Ω @ VGS=10V, ID=4.0A * Fast Switching Capability * Avalanche Energy Specified  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UFC8N80L-TA3-T UFC8N80G-TA3-T TO-220 UFC8N80L-TF1-T UFC8N80G-TF1-T TO-220F1 UFC8N80L-TF3-T UFC8N80G-TF3-T TO-220F Note: Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-422.