Datasheet4U Logo Datasheet4U.com

UFU520Y - DUAL NPN WIDEBAND SILICON RF TRANSISTOR

General Description

The UTC UFU520Y are Dual NPN silicon RF transistor for high speed, low noise applications in a plastic.

The UTC UFU520Y suitable for small signal to medium power applications up to 2 GHz.

Key Features

  • S.
  • Low noise, high breakdown RF transistor.
  • Minimum noise figure (NFmin) = 0.65dB at 900 MHz.
  • Maximum stable gain 19dB at 900 MHz.
  • 11GHz fT silicon technology.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UFU520Y DUAL TRANSISTOR DUAL NPN WIDEBAND SILICON RF TRANSISTOR  DESCRIPTION The UTC UFU520Y are Dual NPN silicon RF transistor for high speed, low noise applications in a plastic. The UTC UFU520Y suitable for small signal to medium power applications up to 2 GHz.  FEATURES * Low noise, high breakdown RF transistor * Minimum noise figure (NFmin) = 0.65dB at 900 MHz * Maximum stable gain 19dB at 900 MHz * 11GHz fT silicon technology  EQUIVALENT CIRCUIT 63 14 25  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UFU520YL-AL3-R UFU520YG-AL3-R SOT-323 Note: Pin Assignment: E: Emitter B: Base C: Collector Pin Assignment Packing 123456 B1 E1 C2 B2 E2 C1 Tape Reel  MARKING www.unisonic.com.