UM6K1N
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 30 V
VGSS ±20 V
Drain Current
Continuous
Pulsed (Note 1)
ID
IDM
100 mA
200 mA
Power Dissipation (Note 2)
Channel Temperature
TC=25°C
PD
TCH
150 mW
150 °C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pw≤10µs, Duty cycle≤50%.
3. With each pin mounted on the recommended lands.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transfer Admittance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=10µA, VGS=0V
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
|YFS|
VDS=3V, ID=100µA
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
VDS=3V, ID=10mA
CISS
COSS
CRSS
VGS=0V, VDS=5V, f=1.0MHz
tD(ON)
tR
tD(OFF)
tF
VDD≈5V, VGS=5V, ID=10mA,
RGS=10Ω, RL=500Ω
MIN TYP MAX UNIT
30 V
1.0 µA
+1 µA
-1 µA
0.8 1.5 V
5 8Ω
7 13 Ω
20 mS
13 pF
9 pF
4 pF
15 ns
35 ns
80 ns
80 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-897.C
