UM6K1N
DESCRIPTION
The UTC UM6K1N is a silicon N-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate threshold voltage.
The UTC UM6K1N is suitable for switching and interfacing applications.
- FEATURES
- RDS(on) < 8 Ω @ VGS=4V, ID=10m A RDS(on) < 13 Ω @ VGS=2.5V, ID=1m A
- High switching speed
- Low gate threshold voltage
- SYMBOL
D1 D2
Power MOSFET
G1 G2
S1 S2
- ORDERING INFORMATION
Ordering Number
UM6K1NG-AL6-R Note: Pin Assignment: G: Gate D: Drain
S: Source
Package SOT-363
Pin Assignment 2345
Packing
S1 G1 D2 S2 G2 D1 Tape Reel
- MARKING
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QW-R502-897.C
Power MOSFET
- ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS 30 V VGSS ±20 V
Drain Current
Continuous Pulsed (Note 1)
ID IDM
100 m A 200 m A
Power Dissipation (Note 2) Channel...
