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UM6K1N - SILICON N-CHANNEL MOSFET

General Description

The UTC UM6K1N is a silicon N-channel MOSFET.

it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate threshold voltage.

The UTC UM6K1N is suitable for switching and interfacing applications.

Key Features

  • RDS(on) < 8 Ω @ VGS=4V, ID=10mA RDS(on) < 13 Ω @ VGS=2.5V, ID=1mA.
  • High switching speed.
  • Low gate threshold voltage.
  • SYMBOL D1 D2 Power MOSFET G1 G2 S1 S2.

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UNISONIC TECHNOLOGIES CO., LTD UM6K1N SILICON N-CHANNEL MOSFET  DESCRIPTION The UTC UM6K1N is a silicon N-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate threshold voltage. The UTC UM6K1N is suitable for switching and interfacing applications.  FEATURES * RDS(on) < 8 Ω @ VGS=4V, ID=10mA RDS(on) < 13 Ω @ VGS=2.5V, ID=1mA * High switching speed * Low gate threshold voltage  SYMBOL D1 D2 Power MOSFET G1 G2 S1 S2  ORDERING INFORMATION Ordering Number UM6K1NG-AL6-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-363 1 Pin Assignment 2345 6 Packing S1 G1 D2 S2 G2 D1 Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co.