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UM6K1N Description

The UTC UM6K1N is a silicon N-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate threshold voltage. The UTC UM6K1N is suitable for switching and interfacing applications.

UM6K1N Key Features

  • RDS(on) < 8 Ω @ VGS=4V, ID=10mA RDS(on) < 13 Ω @ VGS=2.5V, ID=1mA
  • High switching speed
  • Low gate threshold voltage
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