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UM6K1N Datasheet Preview

UM6K1N Datasheet

SILICON N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
UM6K1N
SILICON N-CHANNEL
MOSFET
DESCRIPTION
The UTC UM6K1N is a silicon N-channel MOSFET. it uses
UTC’s advanced technology to provide the customers with a
minimum on state resistance, high switching speed and low gate
threshold voltage.
The UTC UM6K1N is suitable for switching and interfacing
applications.
FEATURES
* RDS(on) < 8 @ VGS=4V, ID=10mA
RDS(on) < 13 @ VGS=2.5V, ID=1mA
* High switching speed
* Low gate threshold voltage
SYMBOL
D1 D2
Power MOSFET
G1 G2
S1 S2
ORDERING INFORMATION
Ordering Number
UM6K1NG-AL6-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-363
1
Pin Assignment
2345
6
Packing
S1 G1 D2 S2 G2 D1 Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-897.C




UTC

UM6K1N Datasheet Preview

UM6K1N Datasheet

SILICON N-CHANNEL MOSFET

No Preview Available !

UM6K1N
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 30 V
VGSS ±20 V
Drain Current
Continuous
Pulsed (Note 1)
ID
IDM
100 mA
200 mA
Power Dissipation (Note 2)
Channel Temperature
TC=25°C
PD
TCH
150 mW
150 °C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pw10µs, Duty cycle50%.
3. With each pin mounted on the recommended lands.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transfer Admittance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=10µA, VGS=0V
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
|YFS|
VDS=3V, ID=100µA
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
VDS=3V, ID=10mA
CISS
COSS
CRSS
VGS=0V, VDS=5V, f=1.0MHz
tD(ON)
tR
tD(OFF)
tF
VDD5V, VGS=5V, ID=10mA,
RGS=10, RL=500
MIN TYP MAX UNIT
30 V
1.0 µA
+1 µA
-1 µA
0.8 1.5 V
5 8
7 13
20 mS
13 pF
9 pF
4 pF
15 ns
35 ns
80 ns
80 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-897.C


Part Number UM6K1N
Description SILICON N-CHANNEL MOSFET
Maker UTC
PDF Download

UM6K1N Datasheet PDF






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