Datasheet4U Logo Datasheet4U.com

UND02R100L - N-CHANNEL MOSFET

General Description

The UTC UND02R100L is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

Key Features

  • RDS(ON) ≤ 8.2 mΩ @ VGS=4.5V, ID=8.0A RDS(ON) ≤ 9.5 mΩ @ VGS=2.5V, ID=7.0A RDS(ON) ≤ 12 mΩ @ VGS=1.8V, ID=4.0A.
  • High Cell Density Trench Technology.
  • High Power and Current Handling Capability.
  • SYMBOL.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Unisonic Technologies

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UND02R100L Preliminary 25A, 20V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UND02R100L is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. The UTC UND02R100L is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 8.2 mΩ @ VGS=4.5V, ID=8.0A RDS(ON) ≤ 9.5 mΩ @ VGS=2.5V, ID=7.0A RDS(ON) ≤ 12 mΩ @ VGS=1.8V, ID=4.