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UPG22N60 Datasheet Preview

UPG22N60 Datasheet

SMPS N-CHANNEL IGBT

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UNISONIC TECHNOLOGIES CO., LTD
UPG22N60
Insulated Gate Bipolar Transistor
600V, SMPS N-CHANNEL IGBT
DESCRIPTION
The UTC UPG22N60 is a N-channel IGBT. it uses UTCs
advanced technology to provide customers with high input
impedance, high switching speed and low conduction loss, etc.
The UTC UPG22N60 is suitable for high voltage switching, high
frequency switch mode power supplies.
FEATURES
* VCE(SAT) 2.5V @ IC=22A, VGE=15V
* 600V Switching SOA Capability
* High switching speed
* High input impedance
* Low conduction loss
SYMBOL
Collector
1
TO-247
Gate
Emitte
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UPG22N60L-T47-T
UPG22N60G-T47-T
TO-247
Note: Pin Assignment: G: Gate C: Collector E: Emitter
Pin Assignment
123
GCE
Packing
Tube
UPG22N60G-T47-T
(1)Packing Type
(2)Package Type
(1) T: Tube
(2) T47: TO-247
(3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC
UPG22N60
1
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 4
QW-R234-008 B




UTC

UPG22N60 Datasheet Preview

UPG22N60 Datasheet

SMPS N-CHANNEL IGBT

No Preview Available !

UPG22N60
Insulated Gate Bipolar Transistor
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCES
600
V
Gate to Emitter Voltage Continuous
VGES
±20
V
Continuous Collector Current
TC=25°C
TC=100°C
IC
44
22
A
A
Collector Current Pulsed (Note 2)
ICM
88
A
Single Pulse Avalanche Energy (Note 3)
EAS
39.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
6.2
V/ns
Power Dissipation
PD 400 W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=10mH, PKIL=2.8A, VCC=50V, RG=25Ω, Starting TJ=25°C
4. IF 22A, di/dt ≤200A/μs, VCC BVCES, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θJC
RATINGS
0.36
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Breakdown Voltage
BVCES IC=250µA, VGE=0V
Collector-Emitter Leakage Current
ICES VCE=600V, VGE=0V
Collector-Emitter Saturation Voltage
VCE(SAT) IC=22A, VGE=15V
TJ=25°C
TJ=150°C
Gate to Emitter Threshold Voltage
VGE(TH) IC=250µA, VCE= VGE
Gate to Emitter Leakage Current
IGES VCE=0V, VGE=±20V
Input Capacitance
CIES
Output Capacitance
COES VCE=25V, VGE=0V, f=1MHz
Reverse Transfer Capacitance
CRES
Total Gate Charge
QG
Gate-Emitter Charge
QGE IC=15A, VCE=50V, VGE=15V
Gate-Collector Charge
QGC
Current Turn-On Delay Time
tD(ON)
Current Rise Time
Current Turn-Off Delay Time
tR
tD(OFF)
IC=15A, VCE=50V, VGE=15V,
RG=10
Current Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward Voltage Drop
VFM IF=22A
Reverse Recovery Time
Reverse Recovery Charge
Note: Pulse Test: Pulse width50μs.
trr
Qrr
IF=22A, dI/dt=100A/μS, VR=400V
MIN TYP MAX UNIT
600 V
200 µA
2.0 2.5 V
2.4 V
4.0 6.5 V
±100 nA
2235
pF
295 pF
56 pF
102 nC
18.5 nC
34.5 nC
44.5 ns
31.5 ns
183 ns
45.5 ns
1.3 V
165 ns
0.66 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R234-008 B


Part Number UPG22N60
Description SMPS N-CHANNEL IGBT
Maker UTC
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