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UPG50N120 - 1200V NPT IGBT

General Description

The UTC UPG50N120 is a 1200V NPT Planar Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to offers superior conduction and switching performance, high avalanche ruggedness and easy parallel operation.

Key Features

  • High speed switching.
  • High input impedance.
  • Low saturation voltage: VCE(SAT) =2.6V @ IC=50A.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UPG50N120 Insulated Gate Bipolar Transistor 1200V NPT PLANAR IGBT  DESCRIPTION The UTC UPG50N120 is a 1200V NPT Planar Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to offers superior conduction and switching performance, high avalanche ruggedness and easy parallel operation.  FEATURES * High speed switching * High input impedance * Low saturation voltage: VCE(SAT) =2.6V @ IC=50A  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UPG50N120L-T64-T UPG50N120G-T64-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-264 Pin Assignment 123 GCE Packing Tube  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 3 QW-R203-055.