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USS304NX Datasheet Preview

USS304NX Datasheet

NPN TRANSISTORS

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UNISONIC TECHNOLOGIES CO., LTD
USS304NX
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
60V NPN LOW SATURATION
MEDIUM POWER TRANSISTOR
DESCRIPTION
The USS304NX is an new low saturation 60V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
1
SOT-89
FEATURES
* Low collector-emitter saturation voltage VCE(SAT)
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for
conventional transistors
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
USS304NXL-AB3-R
USS304NXG-AB3-R
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-89
Pin Assignment
123
BCE
Packing
Tape Reel
USS304NXG-AB3-R
(1)Packing Type
(2)Package Type
(3)Green Package
(1) R: Tape Reel
(2) AB3: SOT-89
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
304NX
Date Code
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 3
QW-R223-033.a




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USS304NX Datasheet Preview

USS304NX Datasheet

NPN TRANSISTORS

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USS304NX
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
60 V
Collector to Emitter Voltage
VCEO
60 V
Emitter to Base Voltage
VEBO
5V
Collector Current
IC 4.7 A
Peak Collector Current
ICM 9.4 A
Collector Dissipation
PC 1.65 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single pulse, PW=10ms.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
76
20
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO IC=100A
Collector-Emitter Breakdown Voltage BVCEO IC=1A
Emitter-Base Breakdown Voltage
BVEBO IE=100A
Collector Cutoff Current
ICBO VCB=60V, IE=0A
Collector-Emitter Cut-off Current
ICES VCE=120V
Emitter Cutoff Current
IEBO VEB=5V, IC=0A
Base Emitter On Voltage (Note)
VBE(ON) VCE=2V, IC=2A
Base-Emitter Saturation Voltage
(Note)
VBE(SAT)
IC=1A, IB=100mA
IC=4A, IB=400mA
IC=0.5A, IB=50mA
IC=1A, IB=50mA
IC=1A, IB=10mA
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
IC=2A, IB=40mA
IC=4A, IB=200mA
IC=4A, IB=400mA
IC=4A, IB=80mA
IC=4.7A, IB=235mA
IC=0.5A, VCE=2V
300
IC=1A, VCE=2V
300
DC Current Transfer Ratio (Note)
hFE IC=2A, VCE=2V
250
IC=4A, VCE=2V
150
IC=6A, VCE=2V
75
Delay Time
td
Rise Time
tr
Turn-ON Delay Time (Note 1)
Storage Time
tD(ON)
ts
IC=3A, VCC=12.5V, IBON=0.15A
IBOFF=-0.15A
Fall Time
tf
Turn-OFF Delay Time
tD(OFF)
Transition Frequency
fT IC=100mA, VCE=10V, f=1MHz
Collector Capacitance
COB VCB=10V, IE=Ie=0A, f=1MHz
Note : Measured under pulsed conditions. Pulse Test: Pulse width 300μs, Duty cycle≤2%.
UNIT
°С/W
°С/W
TYP MAX UNIT
V
V
V
100 nA
nA
100 nA
0.85 V
0.9 V
1.05 V
35 mV
70 mV
120 mV
150 mV
210 mV
200 mV
290 mV
245 mV
15 ns
95 ns
110 ns
360 ns
195 ns
555 ns
130 MHz
48 70 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R223-033.a


Part Number USS304NX
Description NPN TRANSISTORS
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