* Very low collector-emitter saturation voltage VCE(SAT)
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional t
USS4041PX Datasheet (222.73 KB)
USS4041PX
UTC
222.73 KB
Pnp transistors.
UNISONIC TECHNOLOGIES CO., LTD USS4041PX Preliminary PNP EPITAXIAL SILICON TRANSISTOR 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR DESCRI.
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