* Low collector-emitter saturation voltage VCE(SAT)
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
USS4360X Datasheet (214.21 KB)
USS4360X
UTC
214.21 KB
Npn transistors.
UNISONIC TECHNOLOGIES CO., LTD USS4360X Preliminary NPN EPITAXIAL SILICON TRANSISTOR 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR DESCRIP.
📁 Related Datasheet
USS4350 NPN SILICON TRANSISTOR (UTC)
USS4041NX NPN TRANSISTOR (UTC)
USS4041PX PNP TRANSISTORS (UTC)
USS4450 NPN SILICON TRANSISTOR (UTC)
USS-312 2-Port PCI-to-USB OpenHCI Host Controller (Lucent)
USS-344 Four-Host PCI-to-USB OpenHCL Host Controller (Agere Systems)
USS-720 USB to IEEE 1284 Bridge (Lucent Technologies)
USS-820D USB Device Controller (Agere Systems)
USS10 RECTIFIERS ASSEMBLIES (Microsemi Corporation)
USS120 AC LINE SWITCH (UTC)
