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USS5350 - PNP TRANSISTOR

Key Features

  • S.
  • Low collector-emitter saturation voltage VCE(SAT).
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.
  • Complement: USS4350.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD USS5350 PNP EPITAXIAL SILICON TRANSISTOR -50V, -3A PNP LOW VCE(SAT) TRANSISTOR  FEATURES * Low collector-emitter saturation voltage VCE(SAT) * High collector current capability: IC and ICM * Higher efficiency leading to less heat generation * Reduced printed-circuit board requirements * Complement: USS4350  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package USS5350L-AA3-R USS5350G-AA3-R SOT-223 USS5350L-AB3-R USS5350G-AB3-R SOT-89 USS5350L-AE3-R USS5350G-AE3-R SOT-23 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E B E C Packing Tape Reel Tape Reel Tape Reel  MARKING PACKAGE SOT-223 SOT-89 SOT-23 www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co.