* Very low collector-emitter saturation voltage VCE(SAT)
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional t
USS5360X Datasheet (214.93 KB)
USS5360X
UTC
214.93 KB
Pnp transistors.
UNISONIC TECHNOLOGIES CO., LTD USS5360X Preliminary PNP EPITAXIAL SILICON TRANSISTOR 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR DESCRIP.
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