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UT3409 - P-CHANNEL MOSFET

General Description

The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • SOT-23-3/SOT-23 RDS(ON) ≤ 130 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 200 mΩ @ VGS =-4.5V, ID=-2.0A.
  • SOT-323 RDS(ON) ≤ 160 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 260 mΩ @ VGS =-4.5V, ID=-2.0A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for UT3409 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UT3409. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UT3409 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent...

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ON The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  FEATURES * SOT-23-3/SOT-23 RDS(ON) ≤ 130 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 200 mΩ @ VGS =-4.5V, ID=-2.0A * SOT-323 RDS(ON) ≤ 160 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 260 mΩ @ VGS =-4.5V, ID=-2.

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